Oxide materials, especially zinc oxide (ZnO), attracted increasing attention of the researchers in the last few years because of their unique optical and transport properties. ZnO has a great potential for many optoelectronic applications due to its wide band gap (3.37 eV) and large exciton binding ITF 2357 (60 meV) at room temperature (Yang et al., 2011, Ono and Iizuka, 2011, Irzh et al., 2010 and Ismail et al., 2002). Different methods have been used to fabricate various ZnO nanostructures in the form of thin films (Yang et al., 2011, Ono and Iizuka, 2011, Irzh et al., 2010, Ismail et al., 2002, Craciun et al., 1995, Gao and Wang, 2002, Chang et al., 2004, Singh et al., 2008, Bashir et al., 2009, Masuda and Kato, 2009 and Ashida et al., 2008). Chemical vapor deposition method (CVD) is widely used in materials-processing technology but it usually works at a high temperature, which is considered as a main disadvantage of the fabrication process. Metal Organic Chemical Vapor Phase Deposition (MOCVD) is a highly complex process for growing crystalline layers that was developed to overcome the above-mentioned problem (Ismail et al., 2002). There are many other techniques that are used to synthesize ZnO thin films, including Pulsed Laser Deposition (PLD) (Craciun et al., 1995), reactive thermal vacuum evaporation (Gao and Wang, 2002), chemical vapor deposition (Chang et al., 2004), reactive magnetic sputtering (Singh et al., 2008), spray pyrolysis (Bashir et al., 2009), sol–gel techniques (Masuda and Kato, 2009) and electrochemical deposition (Ashida et al., 2008). The most common methods used for chemical vapor deposition are those applying radiofrequency and microwave techniques. The microwave method has proven to be better than the radio frequency method due to its plasma stability, symmetry, and sensitivity of oxidation process crystallization (Ismail et al., 2002).