The impurity content and stoichiometry of the
All of the above precursors exist in a solid state at room temperature, which may not be appropriate for use in commercial CVD and ALD instruments. As an alternative, liquid In precursors are anticipated to be more advantageous for practical growth of indium oxides, especially to deposit low resistivity films at moderate temperatures with high growth rates. In this T-5224 study, we report on the microstructure, electrical and optical properties of In2O3 films prepared using a liquid precursor; [3-(dimethylamino)propyl]dimethyl indium (DADI). The deposited In2O3 films exhibit relatively high growth rates at temperatures above 250 °C and low resistivity (9.2×10−5 Ω cm) with high optical transmittance.
2. Experimental procedures
3. Results and discussion
Fig. 1. (a) Thermal gravimetric analysis (TGA) and (b) differential scanning calorimetry (DSC) results of the DADI precursor.Figure optionsDownload full-size imageDownload as PowerPoint slide
Fig. 2. Dependence of growth rates of In2O3 deposited by ALD as a Paleozoic Era function of (a) precursor dose and (b) substrate temperature.Figure optionsDownload full-size imageDownload as PowerPoint slide