Fig plots I ndash V curves of the fabricated

After Rs has been obtained from Eq. (4), the saturated current (J0) can be obtained from the intercept of the plot of ln(J′+Jsc)ln(J′+Jsc) as a function of V−RsJ′V−RsJ′. Table 2 present the photovoltaic and diode parameters of the prepared CIGS solar cell.
Table 2.
Diode parameters of Cu(In,Ga)Se2 solar AT 56 prepared with selenium ions heated at different temperatures.Heating temperature (°C)Rs (Ω cm2)G (mS/cm2)AJ0 (mA/cm2)3502.0553.13.089.48×10−14500.899.192.389.74×10−25500.816.302.065.75×10−3Full-size tableTable optionsView in workspaceDownload as CSV
As the amniocentesis heating temperature was increased, the Rs value of the prepared solar cell decreased. This result can be explained on the basis of the grain growth during heating. As shown in Fig. 6(b)–(d), the sizes of the grains in the CIGS films increased with the heating temperature. The growth of grains in the films reduced the number of grain boundaries, facilitating the transfer of photogenerated electrons, which reduced Rs.