β-SiC films were deposited by laser CVD using A 804598 Nd:YAG laser. In a H2 atmosphere, the amorphous SiCO phase transformed into β-SiC, eventually resulting in a mixture of β-SiC and carbon, as the deposition temperature was increased. The β-SiC films comprised fine submicron-sized grains, which formed a three-dimensional network. The β-SiC phase with small amounts of free carbon had a lamellar structure. In an Ar atmosphere, the amorphous SiCO phase produced β-SiC with an increase in Tdep. β-SiC films without free carbon were obtained at temperatures of 1473–1673 K at Rdep values of 1500–2000 μm h−1. These films exhibited a spindle apparatus (111)-oriented columnar structure.
AcknowledgementsThis research was supported in part by a Grant-in-Aid for Young Scientists (A) (No. 25709069) from the Japan Society for the Promotion of Science (JSPS) and a Grant-in-Aid for Challenging Exploratory Research (No. 25630273) from JSPS. This work was also supported by Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), "Structural Materials for Innovation" (Funding agency: JST).