AcknowledgementsThis work was supported by the International Collaborative Energy Technology R&D Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 2138520030800).
Zn0.86X0.1Ga0.04O (X: Be, Mg, Ca, Sr) films; Alloying effect of group-II element; RF magnetron sputtering; Raman scattering analysis
In this Rimonabant work, we have tried co-doping of Ga and four different group-II elements including Be, Mg, Ca, and Sr into ZnO film using RF magnetron sputtering, in an translocation effort to simultaneously improve the conductivity and the band-gap of ZnO. The doping effects of the group-II elements on the electrical, optical, and structural properties of the sputter grown ZnXGaO (X: Be, Mg, Ca, Sr) films were evaluated in detail and compared with each other.
3. Results and discussion
Fig. 1. XRD spectra of the Zn0.86X0.1Ga0.04O (X: Be, Mg, Ca, Sr) films recorded at diffraction angle between 20° and 80°.Figure optionsDownload full-size imageDownload as PowerPoint slide