Scattering mechanisms in relaxed and strained InGaAs

Their research has shown that BX517(PDK1 inhibitor2) scattering from background impurities limits the mobility at lower carrier densities, scattering from alloy disorder becomes more important at higher carrier densities. Capotondi et al. [1] reduced the impact of alloy disorder by inserting binary InAs into the quantum well. Understanding how each scattering mechanism influences the total mobility is crucial when attempting to further improve mobility in InGaAs which could make the realisation of spin and/or Josephson FETs possible [8] and [9].