The growth conditions for modulation doped In

The growth conditions for modulation doped In0.75Ga0.25As/In0.75Al0.25As quantum wells on GaAs were studied. A sample grown under 1.0×10−5 torr arsenic over pressure with 1.8×1017 cm−3 modulation doping at 337 °C has the highest mobility. A peak mobility of 4.3×105 cm2 V−1 s−1 XMD-17-51 obtained at 3.7×1011 cm−2 at 1.5 K with a gated structure.