To estimate the ratio of substitutional In

The LTG-In0.45Ga0.55As samples in this study did not include any GaAs and/or InxGa1-xAs layers with high-crystalline quality and therefore, it Cilengitide was difficult to separate the RBS signals of In and As+Ga clearly in these samples. Therefore, we measured the RBS of a commercial semi-insulating (001)-oriented GaAs substrate as a reference for high quality crystal with zincblende structure, and applied the results toχmin(GaAs)χmin(GaAs) in eq.