AcknowledgmentsThe work Tariquidar supported in part by Federal Program of Ministry of Education and Science of RF (Project #14.604.21.0008 from 17.06.2014 with the applied research unique identifier RFMEFI60414×0008). The studies were partly carried out in the Joint Research Center “Material science and characterization in advanced technology” under financial support of the Ministry of Education and Science of RF.
A1. Doping; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting II–VI materials
In palisade study, GZO films are grown by plasma-assisted molecular beam epitaxy (PA-MBE). An in-situ post-annealing process under Zn overpressure is used to improve the electrical properties and suppress the generation of acceptor-like defects. GZO films with different growth temperatures are also investigated with respect to the electrical, structural and optical properties.
3. Characterization of GZO films
3.1. Influence of thermal annealing under Zn overpressure