Fig. 3. X-ray diffraction pattern of samples A to E, whose TGa=500, 600, 700, 750, and 800 °C, respectively.Figure optionsDownload full-size imageDownload as PowerPoint slide
Fig. 4. Resistance and mobility versus the gallium content.Figure optionsDownload full-size imageDownload as PowerPoint slide
Fig. 5. Ternary plots distribution of IGZO thin films with different AS-1404 contents ratio, where x, y, and z denote the atomic percentage of zinc, indium and gallium, respectively. Samples A to C revealed a crystal structure. Otherwise, samples D to K exhibit an amorphous structure.Figure optionsDownload full-size imageDownload as PowerPoint slide
Fig. 6. XRD results of sample-I as (a) as-grown and (b) after annealing at 1100 °C within 30 min.Figure optionsDownload full-size imageDownload as PowerPoint slide
InGaZnO thin films were demonstrated by PA-MBE. With Ga flux increasing, crystal growth along with defect worsened the structure quality. EDX results show ovulation the bonding strength of Ga–O is stronger than In–O and Zn–O. Amorphous structure dominates when the content of gallium and indium reach several atomic percentages. The highest mobility of 74 cm2/V s was also obtained. The content ratio of In:Ga:Zn:O related to 1:1:1:4 was obtained. Crystalline InGaO3(ZnO) quaternary compounds were successfully demonstrated by annealing process at 1100 °C.