In the pursuit of transistor

In the pursuit of transistor scaling, the tunnel field effect transistor (TFET) is a very promising device for future low-power Complementary-Metal-Oxide-Semiconductor (CMOS) technologies [1] and [2]. It can achieve steep turn-on with a Subthreshold Swing SS<60 mV/dec due to the Deltarasin filtering mechanism by Band-To-Band Tunneling (BTBT). This allows a higher ratio of on-current to off-current (Ion/Ioff) at reduced operating voltage Vdd (<0.5 V) as compared to the state of the art FinFET devices which are considered nowadays key in power consumption scaling [3].