We should note that the negligible difference in

It is known that the surface (S)-SNAP 5114 γ of Ni(1 0 0) crystal\'s plane is higher than for Ni(1 1 1) plane (γ(1 0 0) > γ(1 1 1)) [21]. This fact contributes to a better wettability of Ni(2 0 0) surface. Besides, Young\'s modulus for Ni in [1 0 0] direction E[1 0 0] ≈ 121.3 GPa is twice lower than in [1 1 1] E[1 1 1] ≈ 262.2 GPa [22], and in this way high elasticity of Ni in [1 0 0] direction promotes growth of Ni(2 0 0) films on SiO2/Si(1 0 0) substrates due to the minimization of the internal stress energy [23]. Higher elasticity of Ni(2 0 0) can also contribute in deeper penetration of oxide ions into the film in comparison with Ni(1 1 1) and, in this way, leads to formation of oxides nanostructures with h(2 0 0) > h(1 1 1). It should be mentioned that the crystallographic orientation of the surface determines not only oxidation rate, but also the etching rate [24]. This gives the possibility to increase the contrast of oxide nanostructures on Ni(2 0 0) surface in comparison with Ni(1 1 1).