The fabrication with the products was as follows: SOI layer Vorinostat molecular weight was thinned down applying oxidation and oxide removal. Several consecutive oxidation/oxide-removal methods took area in an effort to assure a small thickness variation across the wafers. Inevitably, many wafers with SOI thickness while in the ten �C 30 nm assortment were fabricated with with-in-wafer SOI thickness variation not greater than 10%. The SOI EISFET is totally depleted (FD) for that offered SOI resistivity (doping) and SOI thickness. MESA-type isolation was used among the units. Subsequent arsenic implant (15 keV/5 e14)) to the source and drain areas took location followed 100 nm SiO2 PECVD for inter layer dielectric (ILD) and opening with the contacts. Ti/Al/TiN was sputtered and patterned for interconnection functions followed by 4,500 ? passivation layer of PECVD nitride.
The seed Ti/Au layer was sputtered followed by Au electroplating from the pad regions. The metal gate in the MOSFETs is found in excess of Succinylcholine Chloride Dihydrate a one hundred nm PECVD SiO2 layer which can be considerably thicker than the thirty nm LPCVD SiO2 of the FD EISFETs. The last stage from the approach was the actual opening from the passivation over the FD EISFETs' energetic area. This was performed with dry etch followed by ultimate moist etch in order to guarantee no physical and/or electrical damage to the underlying active gate.Inside the all round die layout (Figure 1), the central gold circle defines the sensing area, and also the place in the sealing O-ring of your liquid flow-cell. The lower portion incorporates the test structures zone. Around the left side, a chemical window (1.five mm �� one.
5 mm) is found that was utilized in buy to execute comprehensive surface evaluation (AFM and ellipsometry).Figure 1.Schematic illustration of die layout (17 mm �� 17 mm).2.2. Electronic MeasurementsI-V measurements have been carried out for the two check structures and FD EISFETs. For the FD EISFETs, I-V measurements had been performed both beneath dry and moist conditions. The electrical setting for the two the selleck chem check structures and the FD EISFETs wet measurements are presented in Figures 2A, B, respectively. In an effort to do the job in aqueous problems we created a one of a kind liquid application apparatus - a flow cell (Figure 3). This one of a kind design and style facilitated the do the job in aqueous environments with no the need to have for contact isolation. The liquids had been retained inside of the O-ring gasket when the thumb screws were tightened against the probe-station chuck.
The connecting pads had been left out, giving straightforward approach for electrical testing (see also Figure 1). The apparatus integrated more vital functions; ultra-low sample volume (30 ��L), quickly and easy means of die replacement and black material to avoid light induced currents. A homemade Ag/AgCl wire kind reference electrode (VREF) was employed to the wet I-V measurements that have been performed with various solutions.