The results achieved for SiC are shown in Table
Table 7 summarizes the adiabatic ionization energies, AIE, of the lowest-lying states of SiC and SiC+. The present results are in excellent agreement with AIE reported by Pramanik et al. . The Sunitinib Malate needed to create adiabatically the X4Σ-X4Σ- ground state of SiC+ from the ground state of neutral SiC is reported to be 8.76 eV by Pramanik et al., whereas the AIE relating those two states is found to be 8.80 eV in the present work. The second lowest-energy electronic state of SiC+, the a2Δa2Δ, is reported to be 10.04 eV above the ground state of SiC by Pramanik et al. , whereas the AIE calculated in the present work is 9.97 eV. The c2Σ-c2Σ- electronic state of SiC+ is reported to be 10.17 eV above the ground state of SiC , whereas the same state of the monocation is found to be 10.16 eV above the ground state of neutral SiC according to present methodology. Besides those results, Table 7 shows also the AIE of some low-lying electronic states of neutral SiC, like A3Σ-A3Σ-, a1Σ+a1Σ+, b1Πb1Π, c1Δc1Δ, and 15Π5Π. Moreover, the table shows the AIE of SiC+, relating the lowest-lying electronic states of the monocation to the lowest-lying ones of SiC2+. Interestingly, the AIE2 involving the ground states of both SiC+ and SiC2+ is found to be 17.42 eV. Table 6 summarizes thirteen different AIE2, which lie within the range from about 16 to about 19.50 eV. Those values suggest that SiC2+ could be created from SiC+ by simple reactions like SiC+ + X+→→ SiC2+ + X or SiC+ + X2+→→ SiC2+ + X+, in which the species X and X+ present ionization energies within the range of the AIE of SiC+. Some few examples are F, Be+, Al+ and As+, for which the ionization energies are 17.42, 18.21, 18.83 and 18.59 eV, respectively .