Similar results were also determined in fabricating the hetero junction

The room temperature ideality factors were also calculated to be 6.2, 5.2, and 4.3 for device-A, n-In0.15Ga0.85N/p-Si (device-B), and device-C, respectively. Within the testing temperatures of 25–150 °C, the barrier heights were in the range of 0.60–0.70 eV, 0.56–0.64 eV, and 0.53–0.61 eV for device-A, device-B, and device-C, respectively.