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The TEM image of the cross-sectional PZT/LSCO/Nb–Ni/Si heterostructure is shown in Fig. 2(a), from which we can see that SGI-1027 the interfaces related to Nb–Ni layer are clean, sharp, and free of interaction and diffusion. To further characterize the interfaces and crystallinity related to Nb–Ni layer, high-resolution TEM was used to obtain information about the interface at atomic scale. As shown in Fig. 2(b), Nb–Ni film is about 4 nm thick, and still amorphous after 550 °C annealing. The stripes of different orientation can be observed in LSCO layer, indicating that LSCO is crystallized, which coincides with the result of the above XRD data. The interfaces between Nb–Ni and its adjacent layer are clean, no signs of reaction or interdiffusion can be found after high temperature process, indicating A-Nb–Ni is a good oxygen diffusion barrier layer for integrating ferroelectric capacitors on Si substrate.
Fig. 2. (a) Cross-sectional image of the PZT/LSCO/Nb–Ni/Si of transmission electron microscopy (TEM); (b) high-resolution TEM cross-sectional image of the interfaces between Nb–Ni layer and its adjacent layer.Figure optionsDownload full-size imageDownload as PowerPoint slide