Discussion and conclusions The experimental results
In a continuous process, primary and secondary DLs reconstruct the growth surface for the generation of tertiary DLs. Creation of these DLs stabilizes the growth procedure.
Three sets of InGaAs/GaAs MQW structures were grown by MBE and characterized by HRXRD and TEM with regard to their crystal quality. Probing the influence of the deposition temperature revealed two distinct deterioration regimes, separated by the optimal growth temperature of ~505 °C.