In the second approach we utilized the
Fig. 8 shows comparison of PL intensity for double heterostructures using ternary CdZnTe and CdMgTe, both grown on virtual wafers, after in-situ removal of the As cap and re-growth of a second CdTe buffer layer. CdTe/CdMgTe double heterostructure shows about three orders of magnitude larger PL intensity compared to CdTe/CdZnTe double heterostructure, with the same CdTe absorber thickness of 1 μm. This can be explained based on the fact that for an equal mole fraction of Mg and Zn in a ternary CdXTe, CdMgTe has a relatively larger valence band offset and conduction band offset to CdTe.