The atom arrangements of a plane sapphire ZnTe and ZnTe
This in-situ surface treatment prevents desorption of Hg from the HgTe surface and ensures flatness of the top HgTe interface. In these conditions, higher growth temperatures can be reached. HgTe layers have been successfully grown at temperatures up to 185 °C with equivalent crystal quality as shown in high resolution X-rays diffraction (HRXRD) spectra of Fig. 1 where CdTe and HgTe peaks are well-defined and surrounded by Pendellösung fringes.