AcknowledgmentsThis work was supported by the Ministry of

Here an additional buffer layer of 0.5 μm GaAs was grown at 580 °C with a growth rate of 0.5 ML/s. Growth rate calibrations were performed previously on a GaAs substrate using RHEED intensity oscillations. Following this, a 0.5 μm layer of GaSb was grown on GaAs at 510 °C using the interfacial misfit (IMF) dislocation array technique as described by Huang et al. [15].