AcknowledgementsThis work is supported by the AFOSR under Grant

The crystalline and surface quality of the GaAs films were monitored as a function of the surface A 286982 of the STO layer. The Sr-terminated STO surface has sufficient surface energy to allow for wetting and 2D growth of the GaAs film and produces the best surface morphologies. Using the GaAs/STO/Si wafers as virtual substrates, GaSb films were grown on the Ga-rich GaAs surface via the IMF array technique.