MG50Q2YS40 Toshiba IGBT Power Module

It’s time to upgrade your high speed switching applications! Visit and get your very own MG50Q2YS40!


Boost the performance of your high speed switching applications with Toshiba IGBT power module MG50Q2YS40! It has unique and exceptional features that make it an advanced power module. Weighing at 0.45 lbs., MG50Q2YS40 has a collector emitter voltage of 1200 and a collector current of 50 amperes. It has both shape and design suitable for highly demanding applications.


MG50Q2YS40 aims for high efficiency, reliability and cost-effectiveness.


With a very low reverse recovery time, MG50Q2YS40 is guaranteed to prevent switching responses. High temperature is also not a problem with this device! Even with a temperature as high as 150 0C, rest assured that MG50Q2YS40 will still remain intact because of its excellent module construction. Talking about its design, you can fully rely on MG50Q2YS40 as it can last longer than those typical models!


Toshiba MG50Q2YS40 has over current limiting function that’s three times better than the usual rated current. By minimizing internal stray inductance, its efficiency rate is further enhanced. With amazing performance and high reliability, you’re ensured of your worthy investment!