Conclusions In conclusion protocols have been

Fig. 3. The Si secondary Omecamtiv mecarbil image of III–V heterostructures inside SiO2 barrier layers using 256 × 256 pixels.Figure optionsDownload full-size imageDownload as PowerPoint slide
The high resolution of the Bi3++ analysis beam allows the individual SiO2 trenches to be resolved with sufficient lateral resolution of less than 100 nm. Fig. 4 shows a 3D isosurface representation of four trenches containing the stack of GaAs/AlAs/InGaAs/AlAs/GaAs layers. The Si contribution from the SiO2 walls has been excluded from the reconstruction. Each of the III–V layers can be distinguished and tubal ligation exhibit a good correspondence with the cross-sectional STEM image of trenches (Fig. 1). ToF-SIMS depth profiles were extracted from each individual trench. As previously reported in [5], the good overlap of indium depth profiles confirms the uniformity of the selective III–V growth method and thus demonstrates that the average SIMS depth profiling approach is valid.